Systems and methods for adjusting programming thresholds of polymer memory cells
AssigneeSpansion LLC
InventorsStuart Spitzer, Juri Krieger, David Gaun
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Abstract
Systems and methodologies are provided for adjusting threshold associated with a polymer memory cell's operation by applying thereupon a regulated electric field and/or voltage pulse width, during a post fabrication stage. Such customization of programming thresholds can typically be obtained at any cycle of programming the memory cell, to increase flexibility in circuit design. Accordingly, the present invention supplies both a current-voltage domain, and/or a frequency-time domain, to facilitate adjusting the program thresholds of the polymer memory cell.
Claims23
A method of setting a programming threshold of a memory device, comprising:
- determining a voltage in an erase direction beyond an erase threshold of a memory cell, to set a desired programming threshold for a next programming stage, the memory cell operating based upon ionic movement through a passive layer and an active layer thereof;
- and
- erasing the memory cell by applying the voltage thereupon.
A method of setting a programming threshold of a memory device, comprising:
- determining a desired programming threshold for a next programming stage of a polymer memory cell, the polymer memory cell operating based upon ionic movement through a passive layer and an active layer thereof;
- obtaining a pulse width that corresponds to the desired programming threshold;
- and
- programming the memory cell via the pulse width.
A method of setting an erase threshold of a memory device, comprising:
- determining a desired erase threshold for a next programming stage of a polymer memory cell, the polymer memory cell operating based upon ionic movement through a passive layer and an active layer thereof;
- obtaining a pulse width that corresponds to the desired erase threshold;
- and
- programming the memory cell via the pulse width.
A memory device comprising:
- an active layer that changes a state based on a migration of ions therefrom when subject to at least one of an external electric field and light radiation, and
- a passive or superionic layer that facilitates supply of ions to the active layer the active layer and the passive layer transfer charges therebetween and provide for an adjustable programming threshold.
A system for customizing a threshold value of a memory cell comprising:
- means for programming information in a polymer memory cell;
- and
- means for adjusting a programming threshold associated with the polymer memory cell.
Dependencies are inferred from the claim text.