Electrode structure of a semiconductor device and method of manufacturing the same
OwnerHyun-soo Chung, Sung-min Sim +3inventors
InventorsHyun-soo Chung, Sung-min Sim, Myeong-soon Park, Dong-hyeon Jang, Young-hee Song
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Abstract
In the manufacture of a semiconductor device, a photosensitive layer is deposited to cover an exposed portion of an electrode with the photosensitive layer. The photosensitive layer is then subjected to a photolithography process to partially remove the photosensitive layer covering the electrode. The electrode may be a ball electrode or a bump electrode, and the semiconductor device may be contained in a wafer level package (WLP) or flip-chip package.
Claims45
A method of manufacturing a semiconductor device, comprising:
- depositing a photosensitive layer to cover an exposed portion of an electrode with the photosensitive layer;
- and
- subjecting the photosensitive layer to a photolithography process to partially remove the photosensitive layer covering the electrode.
A method of manufacturing a semiconductor device, comprising:
- providing a semiconductor element which includes a surface and a plurality of electrodes having respective bottom portions mounted to the surface;
- depositing a photosensitive layer to cover the surface and the electrodes of the semiconductor element;
- and
- subjecting the photosensitive layer to a photolithography process to partially remove the photosensitive layer so as to expose respective top portions of the electrodes.
A method of manufacturing a wafer level package, comprising:
- providing a wafer having a surface which includes a plurality of chip regions separated by scribe lines, and a plurality of electrodes having respective bottom surfaces mounted in each of the chip regions;
- covering the surface of the wafer with a photosensitive layer;
- subjecting the photosensitive layer to a photolithography process to partially remove the photosensitive layer so as to expose respective top portions of the electrodes in each of the chip regions.
A semiconductor device comprising an electrode which includes a bottom portion mounted to a conductive layer and which is partially embedded in a polymer layer, wherein a top portion of the electrode is exposed through an opening in the polymer layer, and wherein the polymer layer is formed of a material that is photosensitive when in a pre-cured state.
A semiconductor device comprising:
- a semiconductor element which includes a surface and a plurality of electrodes having respective bottom portions mounted to the surface;
- and
- a polymer layer which covers the surface of the semiconductor element and which includes a plurality of openings which respectively partially expose a top portion of the electrodes, wherein the polymer layer is formed of a material that is photosensitive when in a pre-cured state.
A semiconductor device comprising:
- a semiconductor element which includes a conductive layer and a plurality of electrodes having respective bottom portions mounted to the conductive layer;
- and
- a polymer layer which contacts the conductive layer of the semiconductor element and which includes a plurality of openings which respectively partially expose a top portion of the electrodes;
- wherein a diameter of each of the electrodes is greater than a diameter of each of the exposed top portions of the electrodes.
Dependencies are inferred from the claim text.