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US 2006/0038249 A1Published application
Semiconductor light-receiving device and UV sensor apparatus
AssigneeSharp Kabushiki Kaisha
InventorJunichiro Koyama
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Abstract
A semiconductor light-receiving device and a UV sensor apparatus that have high photoelectric conversion efficiency even for short-wavelength radiation are provided. The semiconductor light-receiving device includes a cathode layer and anode layers formed at a surface of the cathode layer. A part of the cathode layer that is located between a pn junction between the cathode layer and one anode layer and a pn junction between the cathode layer and the other anode layer is a light-receiving region.
Claims9
A semiconductor light-receiving device comprising:
- a first-conductivity-type semiconductor layer;
- and
- a pair of second-conductivity-type semiconductor layers formed at a surface of said first-conductivity-type semiconductor layer, wherein
- said first-conductivity-type semiconductor layer has a part that is a light-receiving region located between a pn junction between said first-conductivity-type semiconductor layer and one of said second-conductivity-type semiconductor layers and a pn junction between said first-conductivity-type semiconductor layer and the other of said second-conductivity-type semiconductor layers.
1 more element
Dependencies are inferred from the claim text.