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AssigneeAnelva Corporation
InventorsHiroki Maehara, Tomoaki Osada, Mihoko Doi, Koji Tsunekawa, Naoki Watanabe
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A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.
A method of production of a magnetoresistance effect device comprised of a magnetic multilayer film including at least two magnetic layers, the method comprising providing under a first mask material comprised of a nonorganic material a second mask material able to react with other atoms to form a conductive substance so that said first and second mask materials make layers which are doubly piled up.
A magnetoresistance effect device made of a magnetic multilayer film, the device comprising:
A magnetoresistance effect device made of a magnetic multilayer film, the device comprising:
A preform for a magnetoresistance effect device made of a magnetic multilayer film, the device comprising:
Dependencies are inferred from the claim text.