Semiconductor device and method of manufacturing the same
AssigneeNEC Electronics Corporation
InventorKazutaka Otsuki
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Abstract
A semiconductor device has a substrate, a first gate electrode, and a second gate electrode. The substrate has an active region surrounded by an isolation region. The first gate electrode is formed on the active region through a gate insulating film. The second gate electrode is formed on the gate insulating film such that the second gate electrode overlaps at least a part of a boundary between the active region and the isolation region. The first gate electrode and the second gate electrode are separated from each other.
Claims18
A semiconductor device comprising:
- a substrate having an active region surrounded by an isolation region;
- a first gate electrode formed on said active region through a gate insulating film;
- and
- a second gate electrode formed on said gate insulating film to overlap at least a part of a boundary between said active region and said isolation region, said second gate electrode being separated from said first gate electrode.
A semiconductor device comprising:
- a substrate having an active region surrounded by an isolation region, thereby a boundary region being formed;
- a first gate electrode crossing a portion of said boundary region;
- and
- a second gate electrode separated from said first gate electrode and covering a portion of said boundary region to reduce leak current in said active region.
A semiconductor device comprising:
- a substrate having an active region surrounded by an isolation region, thereby a boundary region with a rectangular shape being formed, said boundary region having a first edge and a second edge which is opposite to said first edge;
- a first gate electrode crossing a portion of said first edge and a portion of said second edge;
- and
- a second gate electrode separated from said first gate electrode and formed on said boundary region other than said portion of said first edge and said portion of said second edge.
Dependencies are inferred from the claim text.