Antiferromagnetic/paramagnetic resistive device, non-volatile memory and method for fabricating the same

A resistive multilayer device, comprising:

• a first layer comprising a first material, the first material being electrically conducting;
• a second layer disposed on the first layer, the second layer comprising a second material;
• wherein a state of the second material is switchable between an antiferromagnetic state and a paramagnetic state by passing current through the second material;
• and
• a third layer disposed on the second layer, the third layer comprising a third material, the third material being electrically conducting;
• and
• a fourth layer comprising a dielectric material, wherein the fourth layer is disposed between the first and third layers,
• wherein the second layer has a resistance in the antiferromagnetic state that is different from its resistance in the paramagnetic state, and
• wherein the state of the second material is retained in an absence of applied power.

A resistive multilayer device, comprising:

• a first layer comprising a first material, the first material being electrically conducting;
• a second layer disposed on the first layer, the second layer comprising a second material selected from the group consisting of NiO, V2O, FeO and CuO;
• a third layer disposed on the second layer, the third layer comprising a third material, the third material being electrically conducting;
• and
• a fourth layer comprising a dielectric material, wherein the fourth layer is disposed between the first and third layers,
• wherein a resistance state of the second layer is switchable between a first resistance state and a second resistance state, the second resistance state having a resistance different than that of the first resistance state, and
• wherein the resistance state of the second layer is retained in an absence of applied power.

A method of fabricating a resistive multilayer device, comprising:

• forming a first layer comprising a first material, the first material being electrically conducting;
• forming a second layer on the first layer, the second layer comprising a second material;
• wherein a state of the second material is switchable between an antiferromagnetic state and a paramagnetic state by passing current through the second material;
• forming a third layer on the second layer, the third layer comprising a third material, the third material being electrically conducting;
• and
• forming a fourth layer between the first and third layers, the fourth layer comprising a dielectric material,
• wherein the second layer has a resistance in the antiferromagnetic state that is different from its resistance in the paramagnetic state, and
• wherein the state of the second material is retained in an absence of applied power.