Display device provided with semiconductor element and manufacturing method thereof, and electronic device installed with display device provided with semiconductor element

A display device comprising:

• a gate electrode formed over a substrate;
• an insulating formed over the gate electrode;
• an island-shape first semiconductor film formed over the gate insulating film;
• a source region including a second semiconductor film comprising an impurity element over the first semiconductor film;
• a drain region including the second semiconductor film over the first semiconductor film;
• a source electrode formed over the source region and extending beyond a side edge of the source region to cover the gate insulating film;
• a drain electrode formed over the drain region and extending beyond a side edge of the drain region to cover the gate insulating film;
• and
• a curve sandwiched between the source electrode and the drain electrode and between the source electrode and the drain electrode,
• wherein the curve is located over the gate electrode by interposing the insulating film and the first semiconductor film therebetween,
• wherein one of each side edges of the source electrode and the drain electrode which are opposed to each other with the curve interposed therebetween is curved in a concave, and the other end is curved in a convex, and
• wherein each side edges of the source region and the drain region which are opposed to each other with the curve interposed therebetween has the same shape as each ends of the source electrode and the drain electrode.

A display device comprising:

• a gate electrode formed over a substrate;
• an insulating film over the gate electrode;
• a source electrode formed over the insulating film;
• a drain electrode formed over the insulating film;
• and
• a semiconductor film formed over the source electrode, the drain electrode, and a portion of the insulating film, said portion being located between the source electrode and the drain electrode,
• wherein each of the source electrode and the drain electrode has a inner side edge opposed to each other,
• wherein one of the inner side edges of the source electrode and the drain electrode is curved in a concave, and the other inner side edge is curved in a convex.

A display device comprising:

• a gate electrode formed over a substrate;
• an insulating film formed over the gate electrode;
• an island-shape semiconductor film including a first semiconductor formed over the gate insulating film;
• a source region including a second semiconductor comprising an impurity element over the island-shape semiconductor film;
• a drain region including the second semiconductor over the island-shape semiconductor film;
• a source electrode formed over the source region and extending beyond an outer side edge of the source region to cover a first portion of the gate insulating film;
• and
• a drain electrode formed over the drain region and extending beyond an outer side edge of the drain region to cover a second portion of the gate insulating film,
• wherein each of inner side edges of the source electrode and the drain electrode which are opposed to each other is curved in a concave, and the other inner side edge is curved in a convex, and
• wherein an inner side edge of the source region which is opposed to an inner side edge of the drain region is aligned with the inner side edge of the source electrode, and
• wherein the inner side edge of the drain region is aligned with the inner side edge of the drain electrode.

A method for manufacturing a display device comprising the steps of:

• forming a gate electrode over a substrate;
• forming an insulating film over the gate electrode;
• coating a region of the insulating film surface at least overlapped with part of the gate electrode with an organic agent;
• discharging a fluid in which conductive fine particles whose grain size is 1 nm or more and 100 nm or less are dispersed in an organic solvent by a droplet discharging method in a region where the organic agent is coated and left and a region of the insulating film where the organic agent is not coated;
• baking and hardening the fluid to form a source electrode and a drain electrode;
• and
• forming a semiconductor film to be in contact with the source electrode, the drain electrode and the insulating film in a curve sandwiched between the source and drain electrodes,
• wherein the organic agent is coated to improve wettability of the fluid in the insulating film surface than in the region where the organic agent is not coated.

A method for manufacturing a display device comprising the steps of:

• forming a gate electrode over a substrate;
• forming an insulating film to cover the gate electrode;
• forming a first semiconductor film over the gate insulating film;
• forming a second semiconductor film containing an impurity element over the first semiconductor film;
• patterning the first semiconductor film and the second semiconductor film each to be an island-shape;
• coating a region of the island-shape semiconductor film surface at least overlapped with part of the gate electrode with an organic agent;
• discharging a fluid in which conductive fine particles whose grain size is 1 nm or more and 100 nm or less are dispersed in an organic solvent by a droplet discharging method in a region where the organic agent is coated and left and a region where the organic agent is not coated;
• baking and hardening the fluid to form a source electrode and a drain electrode;
• and
• forming a source region and a drain region by dry etching the second semiconductor film with the use of the source electrode and the drain electrode as masks,
• wherein the organic agent is coated to improve wettability of the fluid in the second semiconductor film surface than in the region where the organic agent is not coated.