Plasma processing apparatus and method

A plasma processing apparatus comprising:

• a process chamber configured to accommodate a target substrate and to be vacuum-exhausted;
• a first electrode and a second electrode disposed opposite each other within the process chamber, the second electrode being configured to support the target substrate;
• a first RF power application unit configured to apply a first RF power having a relatively higher frequency to the first electrode;
• a second RF power application unit configured to apply a second RF power having a relatively lower frequency to the second electrode;
• a DC power supply configured to apply a DC voltage to the first electrode;
• a process gas supply unit configured to supply a process gas into the process chamber;
• and
• a control unit configured to control any one of application voltage, application current, and application power from the DC power supply to the first electrode,
• wherein the first electrode includes an inner electrode and an outer electrode, the first RF power is divided and applied to the inner electrode and the outer electrode, and the DC power supply is connected to at least one of the inner electrode and the outer electrode.

A plasma processing method using a process chamber with a first electrode and a second electrode disposed opposite each other therein, the second electrode being configured to support a target substrate, the method comprising

• supplying a process gas into the process chamber, while applying a first RF power having a relatively higher frequency to the first electrode, and applying a second RF power having a relatively lower frequency to the second electrode, to generate plasma of the process gas, thereby performing a plasma process on a target substrate supported by the second electrode,
• wherein the method comprises:
• applying a DC voltage to the first electrode;
• and
• performing the plasma process on the target substrate while the applying the DC voltage to the first electrode.

A plasma processing method using a process chamber with a first electrode and a second electrode disposed opposite each other therein, the first electrode including an inner electrode and an outer electrode, and the second electrode being configured to support a target substrate, the method comprising

• supplying a process gas into the process chamber, while applying a first RF power having a relatively higher frequency to the first electrode, and applying a second RF power having a relatively lower frequency to the second electrode, to generate plasma of the process gas, thereby performing a plasma process on a target substrate supported by the second electrode,
• wherein the method comprises:
• applying a DC voltage to at least one of the inner electrode and the outer electrode;
• and
• performing the plasma process on the target substrate while the applying the DC voltage to the first electrode.