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US 2006/0033181 A1Published application
Buried conductors
AssigneeMicron Technology, Inc.
InventorsPaul Farrar, Wendell Noble
Life of this patent
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Abstract
Buried conductors within semiconductor devices and structures, and methods for forming such conductors, are disclosed. In one embodiment of the invention, a semiconductor structure includes a substrate and a plurality of conductive elements buried within the substrate. The conductive elements may be metal, such as tungsten or a tungsten alloy. The invention described in the disclosure provides for advantages including formation of three-dimensional
Claims21
A semiconductor device comprising:
- a substrate having an active semiconductor layer formed thereon;
- a plurality of substantially parallel buried conductive elements separated from the active semiconductor layer by and surrounded by an insulating material;
- and
- a deep trench capacitor formed through the active semiconductor layer, the insulative material, and between the conductive elements, the deep trench capacitor surrounded by a dielectric material.
1 more element
A semiconductor device comprising:
- a substrate having an active semiconductor layer formed thereon;
- a first buried layer buried at a first depth within the substrate and including a plurality of substantially parallel first conductive elements oriented in a first direction;
- a second buried layer buried at a second depth within the substrate and including a plurality of substantially parallel second conductive elements oriented in a second direction, wherein the second depth is greater than the first depth;
- an insulating material arranged to separate the first and second buried layer and to separate the first and second conductive elements, and
- a deep trench capacitor formed through the active semiconductor layer, the insulative material, and between the plurality of substantially parallel first conductive elements.
2 more elements
A semiconductor device comprising:
- a substrate having an active semiconductor layer formed thereon;
- a first buried layer buried at a first depth within the substrate and including a plurality of substantially parallel first conductive elements oriented in a first direction;
- a second buried layer buried at a second depth within the substrate and including a plurality of substantially parallel second conductive elements oriented in a second direction, wherein the second depth is greater than the first depth;
- an insulating material arranged to separate the first and second buried layer and to separate the first and second conductive elements;
- a deep trench capacitor formed through the active semiconductor layer, the insulative material, and between the plurality of substantially parallel first conductive elements;
- and
- wherein the plurality of substantially parallel second conductive elements are located either in front of or behind the deep trench capacitor.
4 more elements
Dependencies are inferred from the claim text.