CMOS power sensor
AssigneeHimax Technologies Limited
InventorHung-Ming Yang
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Abstract
A CMOS power sensor is disclosed in the present invention. The CMOS power sensor includes a current coil, a high voltage device circuit, and a Hall device. The current coil is fabricated during the process steps of forming gold bumps of a CMOS device. One end of the current coil is connected to a voltage source, and the other end of the current coil is connected to a load. The high voltage device circuit is connected to the voltage source. The Hall device is connected to the high voltage device circuit and induces a Hall voltage in response to the magnetic field generated by the current coil.
Claims25
A CMOS power sensor to detect a power magnitude of a given voltage source, comprising:
- a CMOS device with at least one gold bump;
- a current coil fabricated during fabrication steps of forming the at least one gold bump;
- wherein said current coil is connected to said voltage source and a load;
- a high voltage device circuit, which is connected to said voltage source;
- and
- a Hall device, which is connected to said high voltage device circuit and induces a Hall voltage in response to a magnetic field generated by said current coil.
A process of forming a CMOS power sensor, wherein said CMOS power sensor is applied to detect a power magnitude of a given voltage source, comprising:
- providing a semiconductor wafer with a Hall device and at least one CMOS device, wherein on the top of said semiconductor wafer is a passivation layer which covers at least one bonding pad;
- opening a contact window over said at least one bonding pad by performing a photolithography process and an etching process;
- coating a photo resist layer on said semiconductor wafer;
- patterning said photo resist layer by using a photo mask during an exposure process, wherein said photo mask comprises patterns for forming at least one gold bump and a current coil;
- wherein said current coil is connected to said voltage source and able to induce a magnetic field which can induce said Hall device to generate a Hall voltage;
- and
- forming said at least one gold bump and said current coil by performing an electroplating process.
A CMOS device, comprising:
- a current coil;
- and
- at least one gold bump;
- wherein said current coil is fabricated during fabrication steps of forming said at least one gold bump.
Dependencies are inferred from the claim text.