Manufacturing method of semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming a first insulation film on a front surface of a semiconductor substrate;
• forming an opening in the first insulation film by etching so as to expose part of the front surface of the semiconductor substrate;
• forming a barrier metal layer that is disposed in the opening and on the first insulation film;
• forming a pad electrode on the barrier metal layer;
• forming a second insulation film on a back surface of the semiconductor substrate;
• forming a via hole that penetrates through the second insulation film and the semiconductor substrate so as to expose part of the barrier metal layer disposed in the opening of the first insulation film and part of the first insulation film surrounding said part of the barrier metal layer disposed in the opening of the first insulation film;
• forming a third insulation film on a sidewall and a bottom of the via hole and on the second insulation film;
• etching the third insulation film so as to expose the part of the barrier metal layer disposed in the opening of the first insulation film;
• forming a through-hole electrode in the via hole, the through-hole electrode being electrically connected with the pad electrode through the barrier metal layer;
• and
• dividing the semiconductor substrate to form at least a semiconductor die.

A method of manufacturing a semiconductor device, comprising:

• forming a first insulation film on a front surface of a semiconductor substrate;
• forming a recess in the first insulation film by etching;
• forming a pad electrode that is disposed in the recess and on the first insulation film;
• forming a second insulation film on a back surface of the semiconductor substrate;
• forming a via hole that penetrates through the second insulation film and the semiconductor substrate so as to expose part of the first insulation film that is underneath the recess and part of the first insulation film surrounding said part of the first insulation film underneath the recess;
• forming a third insulation film on a sidewall and a bottom of the via hole and on the second insulation film;
• etching the third insulation film and the first insulation film so as to expose the part of the pad electrode disposed in the recess;
• forming a through-hole electrode in the via hole, the through-hole electrode being electrically connected with the pad electrode;
• and
• dividing the semiconductor substrate to form at least a semiconductor die.

A method of manufacturing a semiconductor device, comprising:

• forming a device element on a front surface of a semiconductor substrate;
• forming a first insulation film on the front surface of a semiconductor substrate so as to cover the device element;
• forming an opening in the first insulation film by etching so as to expose part of the device element;
• forming a pad electrode that is disposed in the opening and on the first insulation film;
• forming a second insulation film on a back surface of the semiconductor substrate;
• forming a via hole that penetrates through the second insulation film and the semiconductor substrate so as to expose part of the device element that is larger than the opening of the first insulation film;
• forming a third insulation film on a sidewall and a bottom of the via hole and on the second insulation film;
• etching the third insulation film and the device element so as to expose part of the pad electrode disposed in the opening of the first insulation film;
• forming a through-hole electrode in the via hole, the through-hole electrode being electrically connected with the pad electrode;
• and
• dividing the semiconductor substrate to form at least a semiconductor die.

A method of manufacturing a semiconductor device, comprising:

• forming a first insulation film on a front surface of a semiconductor substrate;
• removing part of the first insulation film by etching;
• forming a pad electrode on the first insulation film so as to fill the part of the first
• insulation film removed by the etching;
• forming a second insulation film on a back surface of the semiconductor substrate;
• forming a via hole above part of the pad electrode filling the removed part of the first insulation film, a lateral size of the via hole being larger than a lateral size of the removed part of the first insulation film;
• forming a third insulation film on a sidewall and a bottom of the via hole and on the second insulation film;
• removing the third insulation film at the bottom of the via hole;
• forming a through-hole electrode in the via hole so that the through-hole electrode is electrically connected with the pad electrode;
• and
• dividing the semiconductor substrate to form at least a semiconductor die.