Memory circuitry

Memory circuitry comprising:

• a memory array comprising a plurality of memory cell capacitors, individual of the capacitors comprising a storage node electrode, a capacitor dielectric region, and a cell electrode;
• the cell electrode being commonly shared among at least some of the plurality of memory cell capacitors within the memory array;
• the cell electrode within the memory array comprising:
• a conductive metal nitride layer;
• and
• a conductor metal layer comprising at least one of elemental tungsten, a tungsten alloy, tungsten silicide and tungsten nitride;
• the conductor metal layer being different in composition from the conductive metal nitride layer;
• and
• polysilicon received over both of the conductive metal nitride layer and the conductor metal layer;
• the conductive metal nitride layer, the conductor metal layer and the polysilicon being received over the storage node electrodes of said at least some of the plurality of memory cell capacitors.

Memory circuitry comprising:

• a memory array comprising a plurality of memory cell capacitors, individual of the capacitors comprising a storage node electrode, a capacitor dielectric region, and a cell electrode;
• the cell electrode being commonly shared among at least some of the plurality of memory cell capacitors within the memory array;
• the storage node electrodes being of a container shape and received within container openings formed within an insulative silicate glass;
• the cell electrode within the memory array comprising:
• a conductive metal nitride layer having a container shape;
• a conductor metal layer received on the conductive metal nitride layer, the conductive metal layer comprising at least one of elemental tungsten, a tungsten alloy, tungsten silicide and tungsten nitride in contact with the conductive metal nitride layer;
• the conductor metal layer being different in composition from the conductive metal nitride layer;
• and
• polysilicon received on the at least one of the elemental tungsten, tungsten alloy, tungsten silicide or tungsten nitride of the conductor metal layer;
• the conductive metal nitride layer, the conductor metal layer and the polysilicon being received over the storage node electrodes of said at least some of the plurality of memory cell capacitors;
• the polysilicon filling last-remaining volume of said container shapes of the storage node electrodes.