Nitride semiconductor light emitting diode and method of manufacturing the same

A nitride semiconductor light emitting diode comprising:

• a light transmittance substrate that allows a nitride semiconductor to be grown thereon;
• an n-type nitride semiconductor layer formed on the light transmittance substrate;
• an active layer formed on the n-type nitride semiconductor layer;
• a p-type nitride semiconductor layer formed on the active layer;
• a mesh-type DBR reflecting layer formed on the p-type nitride semiconductor layer, the mesh-type DBR reflecting layer having a plurality of open regions, the mesh-type DBR reflecting layer being composed of first and second nitride layers having different Al content, the first and second nitride layers being alternately stacked several times to form the mesh-type DBR reflecting layer;
• and
• an ohmic contact layer formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer exposed through the open regions of the mesh-type DBR reflecting layer.