Transparent double-injection field-effect transistor
AssigneeHewlett-Packard Development Company, L.P.
InventorRandy Hoffman
Life of this patent
Estimating the term…
Abstract
A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.
Claims21
-50. (canceled)
A field-effect transistor, comprising:
- a) an anode;
- b) a cathode spaced apart from the anode;
- c) a substantially transparent channel adapted to selectively conduct carriers between the anode and the cathode;
- d) at least one substantially transparent gate electrode adapted for controlling current in the channel;
- and
- e) at least one substantially transparent gate insulator, only one of the anode and cathode being adapted to inject carriers into the channel.
-57. (canceled)
A method for fabricating a double-injection field-effect transistor, the method comprising the steps of:
- a) providing a substrate;
- b) depositing and patterning a first conductive layer to form an anode;
- c) depositing and patterning a second conductive layer to form a cathode spaced apart from the anode;
- d) forming a transparent channel extending at least between the anode and cathode;
- e) depositing and optionally patterning at least one transparent insulating layer to form at least one gate insulator;
- and
- f) depositing and patterning at least one transparent conductive layer to form at least one gate electrode overlapping at least a portion of the transparent channel and at least partially aligned with the at least one gate insulator.
A method of using a substantially transparent double-injection field-effect transistor, comprising the steps of:
- a) forming an array of pixel elements for a display;
- b) forming at least one substantially transparent double-injection field-effect transistor in at least partial alignment with and electrically coupled with each pixel element of the array;
- and
- c) controlling each pixel element of the array with the at least one substantially transparent double-injection field-effect transistor corresponding to the pixel element.
Dependencies are inferred from the claim text.