Thin film transistor, method of manufacturing thin film transistor, and display device

A thin film transistor having a source region, a channel region, and a drain region in a semiconductor thin film having an inclined face raised in a growth edge direction of grains which have grown in a lateral direction crossing a thickness direction, the thin film transistor having a gate insulating film and a gate electrode in an upper part of the channel region,

• wherein a channel-region-side edge portion of at least one of the drain region and the source region is disposed in such a manner as to be positioned in the vicinity of a vertex of the inclined face.

A thin film transistor having a source region, a channel region, and a drain region in a semiconductor thin film having an inclined face whose film thickness increases toward a lateral growth edge point in a silicon film growing in a lateral growth direction from a lateral growth start position, the thin film transistor having a gate insulating film and a gate electrode in an upper part of the channel region,

• wherein a channel-region-side edge portion of at least one of the drain region and the source region is disposed in such a manner as to be positioned in the vicinity of a vertex of the semiconductor thin film whose film thickness increases.

A method of manufacturing a thin film transistor, comprising:

• a step of irradiating a non-single crystal semiconductor film with modulation laser light having inverted-peaked light intensity distribution to form a crystallized semiconductor thin film whose section has a peaked shape in an irradiated region;
• and a step of positioning a channel-region-side edge portion of at least one of a drain region and a source region in the vicinity of a vertex port-ion of the peaked-shaped crystallized semiconductor thin film to form the thin film transistor in the positioned portion.