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US 2006/0033086 A1Published application
Acene-thiophene semiconductors
Assignee3M Innovative Properties Company
InventorChristopher Gerlach
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Abstract
Acene-thiophene compounds are disclosed that are useful as organic semiconductors. The compounds, when used as the semiconductor layer in organic thin-film transistors exhibit device characteristics, like charge-carrier mobilities and current on/off ratios, that are comparable to those of pentacene. Also described are semiconductor devices comprising at least one compound of the invention; and articles comprising the semiconductor devices such as thin film transistors or transistor arrays, and electroluminescent lamps.
Claims23
A method of making an organic thin-film transistor device comprising:
- a) providing a substrate;
- b) depositing a gate electrode material on the substrate;
- c) depositing a gate dielectric on the gate electrode material;
- d) depositing an organic semiconductor layer comprising acene-thiophene compounds, and
- e) providing a source electrode and a drain electrode contiguous to the organic semiconductor layer adjacent to the gate dielectric layer;
- wherein said acene-thiophene compounds are of the formula:
- wherein Ac is a substituted or unsubstituted acenyl group selected from 2-anthracenyl, and 2-tetracenyl, R1 is Ac, an alkyl group or H, each of R2 and R3 is independently selected from H, alkyl groups, alkoxy groups, thioalkoxy groups, halogen atoms, and combinations thereof, and n is 1 to 4, and/or of the formula:
- wherein Ac′ is an acenyl group selected from substituted or unsubstituted 2,6-anthracenyl or 2,8-tetracenyl;
- R1 is an acenyl group selected from substituted or unsubstituted 2-anthracenyl or 2-tetracenyl, an alkyl group or H;
- each of R2 and R3 is independently selected from H, alkyl groups, alkoxy groups, thioalkoxy groups, halogen atoms, and combinations thereof, and n is 1 to 4.
7 more elements
Dependencies are inferred from the claim text.