Back to results
US 2006/0032833 A1Published application
Encapsulation of post-etch halogenic residue
AssigneeApplied Materials, Inc.
InventorsMark Kawaguchi, Thorsten Lill, Anisul Khan
Life of this patent
Estimating the term…
Abstract
A method of etching is provided that includes transferring a substrate into a vacuum environment, etching a material layer on the substrate and depositing a polymeric film encapsulating etch residues on the substrate without removing the substrate from the vacuum environment.
Claims56
A method of etching, comprising:
- transferring a substrate into a vacuum environment;
- etching a material layer on the substrate in the vacuum environment;
- and
- depositing a polymeric film encapsulating etch residue without removing the substrate from the vacuum environment.
1 more element
A method of etching, comprising:
- etching a substrate in an etch reactor using a halogen containing etchant;
- depositing in-situ a polymeric film encapsulating residue formed on the substrate during etching;
- and
- removing the polymeric film and the residue from the substrate ex-situ in the reactor.
1 more element
Dependencies are inferred from the claim text.