Plasma processing apparatus capable of suppressing variation of processing characteristics
OwnerNaoshi Itabashi, Tsutomu Tetsuka +1inventors
InventorsNaoshi Itabashi, Tsutomu Tetsuka, Atsushi Ito
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OwnerNaoshi Itabashi, Tsutomu Tetsuka +1inventors
InventorsNaoshi Itabashi, Tsutomu Tetsuka, Atsushi Ito
Estimating the term…
A plasma processing apparatus includes a reaction container with the inner side wall thereof insulated, a sample rest and an antenna arranged in the reaction container. The high-frequency power is supplied to the antenna from a plasma generating power supply, the processing gas is introduced into the reaction container and converted to a plasma, and the sample placed on the sample rest is processed by the plasma. A matching unit for securing the impedance matching is inserted between the plasma generating power supply and a load circuit including the antenna. The matching unit includes a sensor for measuring the impedance characteristic on the load circuit side and a unit for changing the match point and the matching track leading to the match point on the input side of the matching unit in accordance with the measurement by the sensor.
A plasma processing apparatus comprising:
Dependencies are inferred from the claim text.