Film formation method and apparatus for semiconductor process

A film formation apparatus for a semiconductor process, comprising:

• a process container having a process field configured to accommodate a target substrate;
• a support member configured to support the target substrate inside the process field;
• a heater configured to heat the target substrate inside the process field;
• an exhaust system configured to exhaust gas inside the process field;
• a first process gas supply circuit configured to supply a first process gas containing a silane family gas to the process field;
• a second process gas supply circuit configured to supply a second process gas containing a nitriding gas or oxynitriding gas to the process field;
• a third process gas supply circuit configured to supply a third process gas containing a doping gas to the process field;
• an exciting mechanism configured to selectively excite the second process gas to be supplied to the process field;
• and
• a control section configured to control an operation of the apparatus,
• wherein, in order to form a film of silicon nitride or silicon oxynitride doped with an impurity on the target substrate by CVD, the control section alternately executes
• a first step of performing supply of the first and third process gases to the process field;
• a second step of stopping supply of the first, second, and third process gases to the process field;
• a third step of performing supply of the second process gas to the process field while stopping supply of the first and third process gases to the process field, the third step comprising an excitation period of supplying the second process gas to the process field while exciting the second process gas by the exciting mechanism;
• and
• a fourth step of stopping supply of the first, second, and third process gases to the process field.

A computer readable medium containing program instructions for execution on a processor, which is used for a film formation apparatus for a semiconductor process for forming a film of silicon nitride or silicon oxynitride doped with an impurity on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, and a third process gas containing a doping gas, wherein the program instructions, when executed by the processor, cause the film formation apparatus to execute

• a first step of performing supply of the first and third process gases to the process field;
• a second step of stopping supply of the first, second, and third process gases to the process field;
• a third step of performing supply of the second process gas to the process field while stopping supply of the first and third process gases to the process field, the third step comprising an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism;
• and
• a fourth step of stopping supply of the first, second, and third process gases to the process field.