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AssigneeJapan Synchrotron Radiation Research Institute
InventorOsami Sakata
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To characterize or evaluate ultra-fine structures such as ultra-fine nanowires grown on a substrate's crystal surface, buried ultra-fine nanolines or nanowires as sandwiched between a substrate's surface and an overlying cap layer, and thin-film crystals, or to solid-liquid interfacial structures comprising a solution and a solid, 0.1 nm or shorter-wavelength x-rays are incident on their surfaces at an angle of a few degrees or less and the diffracted x-rays are recorded with a two-dimensional x-ray detector in one action within a very short period of time, whereby the intensities of the diffracted x-rays from the ultra-fine structures or solid-liquid interfacial structures are visualized in the reciprocal lattice space and their structures are rapidly analyzed.
A method for rapid acquisition of the crystal structure possessed by ultra-fine nanowires grown on a substrate crystal surface.
A method for rapidly determining the crystal domain size or correlation length that is possessed by ultra-fine nanowires grown on a substrate crystal surface.
A method for rapidly analyzing the orientations ultra-fine nanowires grown on a substrate crystal surface with respect to the substrate crystal.
A method for knowing rapidly whether buried ultra-fine nanolines or nanowires as sandwiched between a substrate crystal and an overlying cap layer are crystalline and, if so, rapidly determining their crystal structure.
A method for rapidly determining the crystal domain size or correlation length that is possessed by buried ultra-fine nanolines or nanowires as sandwiched between a substrate crystal and an overlying cap layer and which are measured in the direction of the lines or wires.
A method for rapidly analyzing the orientations buried ultra-fine nanolines or nanowires as sandwiched between a substrate crystal and an overlying cap layer with respect to the substrate crystal.
A method for rapidly analyzing the crystal structure of a thin-film crystal, its crystal domain size, and the proportion of any differently oriented crystal domains that may be present.
A method for rapidly analyzing the structures of ultra-fine structures such as ultra-fine nanolines or nanowires grown on a substrate crystal surface, buried ultra-fine nanolines or nanowires as sandwiched between a substrate surface and an overlying cap layer, or thin-film crystals, which method comprises the steps of:
An apparatus for rapid x-ray structural analysis of structures which comprises an incident angle changing mechanism that controls the angle a sample's surface forms with an incident x-ray, a table that adjusts the height of that mechanism, a table for adjusting the height of the sample, a two-dimensional detector, a support of the two-dimensional detector, and a sample holder, said two-dimensional detector being installed in a cylinder of which center axis passes through the sample position and which can be installed to the vertical position or horizontal position. The detector can be installed at any angular position within the range of 360 degrees about the axis of the cylindrical holder. The overall image of diffraction intensity profile can be measured without rotating the sample.
An apparatus for rapid acquisition of the crystal structure possessed by ultra-fine nanolines or nanowires grown on a substrate crystal surface.
An apparatus for rapidly determining the crystal domain size or correlation length that is possessed by ultra-fine nanolines or nanowires grown on a substrate crystal surface.
An apparatus for rapidly analyzing the orientations ultra-fine nanolines or nanowires grown on a substrate crystal surface with respect to the substrate crystal.
An apparatus for knowing rapidly whether buried ultra-fine naolines or nanowires as sandwiched between a substrate crystal and an overlying cap layer are crystalline and, if so, rapidly determining their crystal structure.
An apparatus for rapidly determining the crystallite size or correlation length that are possessed by buried ultra-fine nanolines or nanowires as sandwiched between a substrate crystal and an overlying cap layer and which are measured in the direction of the lines or wires.
An apparatus for rapidly analyzing the orientations buried ultra-fine nanolines or nanowires as sandwiched between a substrate crystal and an overlying cap layer with respect to the substrate crystal.
An apparatus for rapidly analyzing the crystal structure of a thin-film crystal.
An apparatus for rapidly analyzing the crystal structure of a thin-film crystal, its crystal domain size, and the proportion of any differently oriented crystal domains that may be present.
An apparatus for rapidly evaluating and analyzing a solution/crystal interfacial structure.
An apparatus with which the job of converting the crystal orientations of a sample to an orthogonal coordinate system as defined for the measuring system, which is described as determining a UB matrix, can be achieved by a single exposure to x-rays with the sample and a detector fixed in angle and position.
An apparatus for rapid x-ray structural analysis of ultra-fine structures which comprises an incident angle changing mechanism that controls the angle a sample's surface forms with an incident x-ray, a table that adjusts the height of that mechanism, a table for adjusting the height of the sample, a two-dimensional detector, a support of the two-dimensional detector, and a sample holder, said two-dimensional detector being installed in a cylinder of which center axis passes through the sample position and which can be installed to the vertical position or horizontal position. The detector can be installed at any angular position within the range of 360 degrees about the axis of the cylindrical holder. The camera length as specified by the distance between the sample and the two-dimensional detector can be changed by using cylinders of different inside diameters, wherein the two-dimensional detector may be used at any position if it is of a planar type, with optional addition of a mechanism for effecting rotation about the normal to the sample surface and a cross sample transportation table, wherein sample size that can be measured ranges from 3 mm long, 3 mm wide and 0.05 mm thick to 120 mm long, 120 mm wide and 20 mm thick, the sample mass that can be measured is up to 5 kg, the camera length that can be adopted ranges from 50 mm to 250 mm, the incident angle changing mechanism permits angular adjustment within ±5 degrees including the critical angle for total external reflection of x-rays from the sample, and wherein the sample height adjusting table is capable of intercepting the incident x-ray beam at half its height by the sample placed on the horizontal.
A method for rapid x-ray structural analysis of a solution/solid interfacial structure, which comprises evaluating rapidly whether crystals are present on a solid surface in solution, namely, at the solution/solid interface.
Dependencies are inferred from the claim text.