Microelectronic cleaning compositions containing oxidizers and organic solvents
AssigneeMallinckrodt Baker, Inc.
InventorChien-Pin Hsu
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Abstract
Cleaning compositions suitable for cleaning microelectronic structures having silicon dioxide, low-k or high-k dielectrics and copper or aluminum metallizations contain an oxidizing agent and a polar organic solvent selected from amides, sulfones, sulfolenes, selenones and saturated alcohols, and optionally other components.
Claims42
1-31. (canceled)
A cleaning composition for cleaning photoresist and residues from microelectronic substrates, said cleaning composition comprising:
- an oxidizing agent;
- a polar organic solvent having hydrogen bonding capability and minimally or non-reactive with the oxidizing agent;
- and
- an alkaline base;
- and optionally one or more of the following components:
- an acid;
- a corrosion-inhibiting co-solvent;
- a chelating or metal complexing agent;
- an oxidizer stabilizing agent;
- a corrosion-inhibiting agent;
- a metal corrosion inhibitor;
- a fluoride compound;
- a surfactant;
- and
- water.
A cleaning composition for cleaning photoresist and residues from microelectronic substrates, said cleaning composition comprising:
- an oxidizing agent;
- and
- a polar organic solvent having hydrogen bonding capability and minimally or non-reactive with the oxidizing agent, the polar organic solvent is selected from the group consisting of sulfones, sulfolanes, sulfolenes, selenones and saturated alcohols;
- and optionally one or more of the following components:
- an acid;
- an alkaline base;
- a corrosion-inhibiting co-solvent;
- a chelating or metal complexing agent;
- an oxidizer stabilizing agent;
- a corrosion-inhibiting agent;
- a metal corrosion inhibitor;
- a fluoride compound;
- a surfactant;
- and
- water.
A process according to claim 64 wherein the microelectronic structure being cleaned is characterized the presence of copper metallization and a dielectric selected from the group consisting of silicon dioxide, a low-κ dielectric and a high-κ dielectric claim 73. A process according to claim 65 wherein the microelectronic structure being cleaned is characterized the presence of copper metallization and a dielectric selected from the group consisting of silicon dioxide, a low-κ dielectric and a high-κ dielectric.
Dependencies are inferred from the claim text.