Cleaning solution of silicon germanium layer and cleaning method using the same

A method of cleaning a semiconductor device comprising:

• preparing a cleaning solution comprising from about 0.01 to about 2.5 percent by weight of a non-ionic surfactant, from about 0.05 to about 5.0 percent by weight of an alkaline compound and from about 92.5 to about 99.93 percent by weight of pure water with respect to the cleaning solution;
• and
• cleaning the semiconductor device which comprises a silicon germanium layer exposed by a trench using the cleaning solution.

A method for cleaning a semiconductor device comprising:

• preparing a cleaning solution comprising from about 0.01 to about 2.5 percent by weight of a non-ionic surfactant, from about 0.05 to about 5.0 percent by weight of an alkaline compound, from about 0.01 to about 2.5 percent by weight of a metal corrosion inhibitor and from about 90 to about 99.9 percent by weight of pure water with respect to the cleaning solution;
• and
• cleaning an MIS (Metal-Insulator-poly Silicon) capacitor in which its upper electrode comprises a silicon germanium layer using the cleaning solution, while preventing damage to the silicon germanium layer and removing impurities present at the surface portion of the silicon germanium layer.