Method for manufacturing a display device including irradiating overlapping regions
AssigneeSemiconductor Energy Laboratory Co., Ltd., a Japan corporation
InventorsShunpei Yamazaki, Koichiro Tanaka
Life of this patent
Estimating the term…
Abstract
A device-forming region where a semiconductor device is formed is arranged on a substrate in the matrix of 2×2. A linear laser beam has a cross-section having a length longer than the width of the device-forming region. When the irradiation of the laser beam is performed, the region irradiated with the end portions of the linear laser beams overlapped with each other or brought into contact with each other, is made positioned outside the device-forming region.
Claims37
1-36. (canceled)
A method for manufacturing a display device comprising:
- forming a semiconductor film over a substrate;
- irradiating a first region of the semiconductor film with a laser light in a first scanning direction;
- irradiating a second region of the semiconductor film with the laser light in a second scanning direction, wherein the second region is partially overlapped with the first region;
- irradiating the second region of the semiconductor film with the laser light in a third scanning direction, wherein the third scanning direction is opposite to the second scanning direction;
- irradiating the first region of the semiconductor film with the laser light in a fourth scanning direction, wherein the fourth scanning direction is opposite to the first scanning direction;
- etching the semiconductor film into a plurality of semiconductor layers;
- and
- forming a plurality of device formation regions in each of the first region and the second region by using at least one of the plurality of semiconductor layers, wherein the overlapped region of the first region and the second region is excluded from the device formation regions.
A method for manufacturing a display device comprising:
- forming a semiconductor film over a substrate;
- irradiating a first region of the semiconductor film with a laser light in a first scanning direction;
- irradiating a second region of the semiconductor film with the laser light in a second scanning direction;
- irradiating the second region of the semiconductor film with the laser light in a third scanning direction, wherein the third scanning direction is opposite to the second scanning direction;
- irradiating the first region of the semiconductor film with the laser light in a fourth scanning direction, wherein the fourth scanning direction is opposite to the first scanning direction;
- etching the semiconductor film into a plurality of semiconductor layers;
- forming a plurality of device formation regions in each of the first region and the second region by using at least one of the plurality of semiconductor layers;
- and
- dividing the substrate into a plurality of device substrates, wherein each of the plurality of device substrates comprises at least one of the plurality of device formation regions.
A method for manufacturing a display device comprising:
- forming a semiconductor film over a substrate;
- irradiating a first region of the semiconductor film with a laser light in a first scanning direction by moving the substrate;
- irradiating a second region of the semiconductor film with the laser light in a second scanning direction by moving the substrate, wherein the second region is partially overlapped with the first region;
- irradiating the second region of the semiconductor film with the laser light in a third scanning direction by moving the substrate, wherein the third scanning direction is opposite to the second scanning direction;
- irradiating the first region of the semiconductor film with the laser light in a fourth scanning direction by moving the substrate, wherein the fourth scanning direction is opposite to the first scanning direction;
- etching the semiconductor film into a plurality of semiconductor layers;
- forming a plurality of device formation regions in each of the first region and the second region by using at least one of the plurality of semiconductor layers;
- and
- dividing the substrate into a plurality of device substrates, wherein each of the plurality of device substrates comprises at least one of the plurality of device formation regions.
A method for manufacturing a display device comprising:
- forming a semiconductor film over a substrate;
- irradiating a first region of the semiconductor film with a laser light in a first scanning direction;
- irradiating a second region of the semiconductor film with the laser light in a second scanning direction, wherein the second region is partially overlapped with the first region;
- irradiating the second region of the semiconductor film with the laser light in a third scanning direction, wherein the third scanning direction is opposite to the second scanning direction;
- irradiating the first region of the semiconductor film with the laser light in a fourth scanning direction, wherein the fourth scanning direction is opposite to the first scanning direction;
- etching the semiconductor film into a plurality of semiconductor layers;
- forming a plurality of device formation regions in each of the first region and the second region by using at least one of the plurality of semiconductor layers;
- and
- dividing the substrate into a plurality of device substrates, wherein each of the plurality of device substrates comprises at least one of the plurality of device formation regions.
A method for manufacturing a display device comprising:
- forming a semiconductor film over a substrate;
- irradiating a first region of the semiconductor film with a laser light in a first scanning direction by moving the substrate;
- irradiating a second region of the semiconductor film with the laser light in a second scanning direction by moving the substrate, wherein the second region is partially overlapped with the first region;
- irradiating the second region of the semiconductor film with the laser light in a third scanning direction by moving the substrate, wherein the third scanning direction is opposite to the second scanning direction;
- irradiating the first region of the semiconductor film with the laser light in a fourth scanning direction by moving the substrate, wherein the fourth scanning direction is opposite to the first scanning direction;
- etching the semiconductor film into a plurality of semiconductor layers;
- and
- forming a plurality of device formation regions in each of the first region and the second region by using at least one of the plurality of semiconductor layers, wherein the overlapped region of the first region and the second region is excluded from the device formation regions.
A method for manufacturing a display device comprising:
- forming a semiconductor film over a substrate;
- irradiating a first region of the semiconductor film with a laser light in a first scanning direction by moving the substrate;
- irradiating a second region of the semiconductor film with the laser light in a second scanning direction by moving the substrate;
- irradiating the second region of the semiconductor film with the laser light in a third scanning direction by moving the substrate, wherein the third scanning direction is opposite to the second scanning direction;
- irradiating the first region of the semiconductor film with the laser light in a fourth scanning direction by moving the substrate, wherein the fourth scanning direction is opposite to the first scanning direction;
- etching the semiconductor film into a plurality of semiconductor layers;
- forming a plurality of device formation regions in each of the first region and the second region by using at least one of the plurality of semiconductor layers;
- and
- dividing the substrate into a plurality of device substrates, wherein each of the plurality of device substrates comprises at least one of the plurality of device formation regions.
Dependencies are inferred from the claim text.