Post treatment of low k dielectric films

A method of processing a substrate, comprising:

• depositing a low dielectric constant film comprising silicon and carbon on a substrate in the presence of RF power;
• and
• post-treating the deposited low dielectric constant film by a process comprising:
• heating the low dielectric constant film from a temperature of between about 25° C. and about 250° C. to a temperature of between about 600° C. and about 1000° C., wherein the low dielectric constant film is heated at the temperature of between about 600° C. and about 1000° C. for about five seconds or less;
• and then
• cooling the low dielectric constant film from a temperature of between about 600° C. and about 1000° C., wherein the low dielectric constant film is heated and cooled within a time period of about 0.5 minutes to about 5 minutes.

A method of processing a substrate, comprising:

• depositing a low dielectric constant film comprising silicon and carbon on a substrate in the presence of RF power;
• and
• post-treating the deposited low dielectric constant film by a process comprising:
• heating the low dielectric constant film to a desired temperature at a rate of at least about 10° C./sec, wherein the low dielectric constant film is maintained at the desired temperature for about five seconds or less;
• and then
• cooling the low dielectric constant film at a rate of at least about 10° C./sec, wherein the low dielectric constant film is heated and cooled within a time period of about 0.5 minutes to about 5 minutes.