Nonlithographic method of defining geometries for plasma and/or ion implantation treatments on a semiconductor wafer

A method for defining geometries in a semiconductor wafer in a processing chamber, the method comprising:

• forming a reusable refractory coated laminar mask by
• defining geometries in a laminar mask substrate corresponding to the geometries to be defined in the semiconductor wafer,
• forming apertures through the laminar mask substrate, and
• forming a layer of refractory material over at least one surface of the etched laminar mask substrate;
• positioning the reusable refractory coated laminar mask over the semiconductor wafer;
• and
• treating the semiconductor wafer through the apertures in the reusable refractory coated laminar mask.

A method for defining geometries in a semiconductor wafer in a processing chamber, the method comprising:

• forming a reusable refractory coated laminar mask by
• defining geometries in a laminar mask substrate corresponding to the geometries to be defined in the semiconductor wafer,
• forming apertures through the laminar mask substrate, and
• forming a layer of refractory material over at least one surface of the laminar mask substrate;
• positioning the reusable refractory coated laminar mask over the semiconductor wafer so that said reusable refractory coated laminar is supported parallel to and at a distance from the semiconductor wafer;
• coupling an RF power source to the reusable refractory coated laminar mask;
• and
• treating the semiconductor wafer through the apertures in the reusable refractory coated laminar mask.

A processing chamber comprising:

• a plate electrode;
• a semiconductor wafer on said plate electrode;
• a source for treating said semiconductor wafer;
• and
• a reusable refractory coated laminar mask positioned over said semiconductor wafer, said reusable refractory coated laminar mask comprising
• a laminar mask substrate defined with geometries corresponding to geometries to be defined in said semiconductor wafer, and including apertures through said laminar mask substrate so that the treating is performed therethrough, and
• a layer of refractory material over at least one surface of said laminar mask substrate.