Trench photolithography rework for removal of photoresist residue
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJyh-Shiou Hsu
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Abstract
The present disclosure provides a method for removing photoresist residue from a low k dielectric above a semiconductor substrate. The method includes creating a first opening in the low k dielectric extending a first depth towards an underlying conductor, and applying and patterning a material above the low k dielectric. In-situ first and second plasma environments are provided, with a bias power being applied to the substrate to attract ion bombardment during the second plasma environment. Trenches can be etched in the low k dielectric, the trenches extending a second depth less than the first depth. Material for the first and second plasmas and the ion bombardment are selected for removing residue of the material from the low k dielectric.
Claims20
A method for processing a semiconductor substrate, comprising:
- applying a patterned photoresist to the substrate;
- performing a rework process on the substrate, the rework process comprising providing a source power for creating a plasma environment and providing a bias power to the substrate for attracting ion bombardment towards the substrate;
- and
- performing an etching process according to the patterned photoresist.
A method for making a dual damascene via opening, comprising:
- providing a low k dielectric above a semiconductor substrate;
- creating a first opening in the low k dielectric extending a first depth towards an underlying conductor;
- applying and patterning a material above the low k dielectric;
- providing a first plasma environment;
- providing a second plasma environment in-situ with the first plasma environment;
- applying a bias power to the substrate to attract ion bombardment during the second plasma environment;
- and
- etching trenches in the low k dielectric, the trenches extending a second depth less than the first depth;
- wherein material for the first and second plasmas and the ion bombardment are selected for removing residue of the material from the low k dielectric.
A method for performing photo rework for a low k dielectric substrate having photoresist residue, the method comprising:
- performing a first plasma stripping process with a first etching environment including fluorocarbon;
- performing a second plasma stripping process with a second etching environment including nitrogen;
- and
- performing a third plasma stripping process with a third etching environment including an inert gas while providing a bias power to the low k dielectric substrate.
Dependencies are inferred from the claim text.