Sequential reducing plasma and inert plasma pre-treatment method for oxidizable conductor layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChao-Hsien Peng, Jing-Cheng Lin, Ching-Hua Hsieh, Shau-Lin Shue
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Abstract
A method for forming a barrier layer upon a copper containing conductor layer employs a hydrogen containing plasma treatment of the copper containing conductor layer followed by an argon plasma treatment of the copper containing conductor layer. The barrier layer may be formed employing a chemical vapor deposition method, such as an atomic layer deposition method. When the deposition method employs a metal and carbon containing source material, the two-step plasma pretreatment provides the barrier layer with enhanced electrical properties.
Claims51
A method for fabricating a microelectronic product comprising:
- providing a substrate having formed therein a first conductor layer susceptible to oxidation;
- treating the first conductor layer with a reducing plasma to form a reducing plasma treated first conductor layer;
- and
- treating the reducing plasma treated first conductor layer with an inert plasma to form a fully treated first conductor layer.
A method for fabricating a microelectronic product comprising:
- providing a substrate having formed thereover a copper containing conductor layer;
- treating the copper containing conductor layer with a hydrogen containing plasma to form a hydrogen containing plasma treated copper containing conductor layer;
- and
- treating the hydrogen containing plasma treated copper containing conductor layer with an argon plasma to form a fully treated copper containing conductor layer.
A method for fabricating a microelectronic product comprising:
- providing a substrate having formed thereover a copper containing conductor layer;
- forming a dielectric on the copper containing conductor layer;
- forming an opening extending into the dielectric layer and over the cooper containing conductor layer;
- treating the copper containing conductor layer with a hydrogen containing plasma to form a hydrogen containing plasma treated copper containing conductor layer;
- and
- treating the hydrogen containing plasma treated copper containing conductor layer with an argon plasma to form a fully treated copper containing conductor layer.
A microelectronic product comprising:
- a substrate having formed therein a conductor layer susceptible to oxidation;
- a dielectric layer having with an opening defined therein over the conductor layer where the conductor layer has been treated with a reducing plasma followed by an inert plasma.
Dependencies are inferred from the claim text.