# US 2005/0239283 A1 · Polishing method, polishing apparatus, and method of manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2005/0239283 A1 - Document ID: US20050239283A1 - Status: Published application - Kind: A1 - Application number: 10/512,745 - Filed: 2003-04-14 - Published: 2005-10-27 - Earliest claimed: 2002-04-30 - Assignees: Sony Corporation - Inventors: Hiroshi Horikoshi; Takeshi Nogami; Shuzo Sato; Shingo Takahashi; Naoki Komai; Kaori Tai; Hiizu Ohtorii - Web page: https://patentgrep.com/patent/US20050239283A1 ## CPC - B24B 53/017: Devices or means for dressing, cleaning or otherwise conditioning lapping tools - B24B 53/001: {involving the use of electric current} - C25F 3/16: Polishing - B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS - C25F: PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR ## Abstract A polishing method and a polishing apparatus by which excess portions of a metallic film 18 can be removed easily and efficiently in planarizing the metallic film 18 by polishing and which is high in accuracy of polishing, are provided. Also, a method of manufacturing a semiconductor device by use of the polishing method and the polishing apparatus is provided. A substrate 17 provided with the metallic film 18 and a counter electrode 15 are disposed oppositely to each other in an electrolytic solution E, an electric current is passed to the metallic film 18 through the electrolytic solution E, and the surface of the metallic film 18 is polished with a hard pad 14. ## Claims ### Claim 1 A polishing method comprising the steps of: disposing a substrate provided thereon with a metallic film and a counter electrode oppositely to each other in an electrolytic solution, passing an electric current to said metallic film through said electrolytic solution, and polishing the surface of said metallic film with a hard pad, to thereby polish said metallic film. ### Claim 2 (depends on 1) A polishing method as set forth in claim 1, wherein said hard pad has a Shore D hardness of not less than 60. ### Claim 3 (depends on 1) A polishing method as set forth in claim 1, wherein said hard pad has a density of not less than 0.80 g/cm3. ### Claim 4 (depends on 1) A polishing method as set forth in claim 1, wherein said hard pad has a compressibility of not more than 1.0%. ### Claim 5 (depends on 1) A polishing method as set forth in claim 1, wherein said hard pad has an elastic recovery of not more than 70%. ### Claim 6 (depends on 1) A polishing method as set forth in claim 1, wherein said hard pad has a compressive strength, per 1 mm thickness under 0.01% compression, of not more than 7 kPa. ### Claim 7 (depends on 1) A polishing method as set forth in claim 1, wherein said hard pad has a Young's modulus of not less than 10 kPa. ### Claim 8 (depends on 1) A polishing method as set forth in claim 1, wherein the surface of said metallic film is polished by said hard pad under a pressure of not more than 2 PSI. ### Claim 9 A polishing apparatus for polishing a metallic film formed on a substrate in an electrolytic solution, said apparatus comprising: a counter electrode disposed oppositely to said substrate; a power source for supplying a voltage, with said substrate as anode and with said counter electrode as cathode; and a hard pad slidingly moved on said substrate so as to polish said metallic film. ### Claim 10 (depends on 9) A polishing apparatus as set forth in claim 9, wherein said hard pad has a Shore D hardness of not less than 60. ### Claim 11 (depends on 9) A polishing apparatus as set forth in claim 9, wherein said hard pad has a density of not less than 0.80 g/cm3. ### Claim 12 (depends on 9) A polishing apparatus as set forth in claim 9, wherein said hard pad has a compressibility of not more than 1.0%. ### Claim 13 (depends on 9) A polishing apparatus as set forth in claim 9, wherein said hard pad has an elastic recovery of not more than 70%. ### Claim 14 (depends on 9) A polishing apparatus as set forth in claim 9, wherein said hard pad has a compressive strength, per 1 mm thickness under 0.01% compression, of not less than 7 kPa. ### Claim 15 (depends on 9) A polishing apparatus as set forth in claim 9, wherein said hard pad has a Young's modulus of not less than 10 kPa. ### Claim 16 (depends on 9) A polishing apparatus as set forth in claim 9, wherein the surface of said metallic film is polished by said hard pad under a pressure of not more than 2 PSI. ### Claim 17 A method of manufacturing a semiconductor device, comprising the steps of providing an insulation film formed on a substrate with wiring trenches for forming metallic wirings, forming a metallic film on said insulation film so as to fill up said wiring trenches, and polishing said metallic film formed on said insulation film, wherein in said step of polishing said metallic film, said substrate provided with said metallic film and a counter electrode are disposed oppositely to each other in an electrolytic solution, an electric current is passed to said metallic film through said electrolytic solution, and the surface of said metallic film is polished with a hard pad, to thereby polish said metallic film.