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US 2005/0239281 A1Published application
Photosensitive dielectric layer
AssigneeIntel Corporation
InventorsMichael Goodner, Kevin O'Brien, Grant Kloster, Robert Meagley
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Abstract
The invention provides a layer of photosensitive material that may be directly patterned. The photosensitive material may then be decomposed to leave voids or air gaps in the layer. This may provide a low dielectric constant layer with reduced resistance capacitance delay characteristics.
Claims14
A method, comprising:
- forming a first via dielectric layer on a substrate;
- patterning the first via dielectric layer to form a via through the first via dielectric layer;
- forming a photosensitive trench dielectric layer on the first via dielectric layer;
- patterning the photosensitive trench dielectric layer to form a trench through the photosensitive trench dielectric layer;
- depositing a conductive material in the via and the trench;
- forming a top layer on the photosensitive trench dielectric layer;
- and
- decomposing, at least partially, the photosensitive trench dielectric layer, decomposed material from the photosensitive trench dielectric layer passing through the top layer.
5 more elements
10-19. (canceled)
A method, comprising:
- forming a photosensitive trench dielectric layer on a substrate;
- and
- directly patterning the photosensitive trench dielectric layer to form a trench through the photosensitive trench dielectric layer.
Dependencies are inferred from the claim text.