Integrated circuits including spacers that extend beneath a conductive line and methods of fabricating the same

An integrated circuit device, comprising:

• an integrated circuit substrate;
• an insulation layer on the substrate including a first portion adjacent the substrate and a second portion remote from the substrate that is narrower than the first portion;
• a contact pad in the insulation layer;
• a conductive line on the second portion of the insulation layer and connected to the contact pad;
• and
• a spacer on the conductive line;
• wherein the spacer extends on a sidewall of the conductive line and between the conductive line and the first portion of-the insulation layer and adjacent the second portion of the insulation layer, to thereby cover an exposed bottom surface of the conductive line.

An integrated circuit device, comprising:

• an integrated circuit substrate;
• a first insulation layer on the substrate including first portions adjacent the substrate, second portions remote from the substrate that are narrower than the first portions, and including a plurality of first contacts to expose the substrate;
• a plurality of conductive lines in the first contacts and on respective second portions of the first insulation layer, and spaced apart from each other;
• a plurality of spacers, a respective one of which is on a sidewall of a respective conductive line;
• a second insulation layer on the conductive lines and the first insulation layer;
• a second contact in the first and second insulation layers to expose a portion of the substrate;
• and
• a contact pad in the second contact;
• wherein the first insulation layer includes a plurality of trenches defined by respective first and second portions exposing bottom surfaces of the conductive lines adjacent the first insulation layer, and wherein a respective spacer is formed on a respective sidewall of the conductive line and on a respective sidewall of a trench adjacent thereto between the conductive line and the first portion of the first insulation layer and adjacent the second portion of the first insulation layer, to thereby cover an exposed bottom surface of the conductive line.

A method for forming an integrated circuit, comprising:

• forming a first insulation layer on an integrated circuit substrate, including therein a plurality of first contact holes;
• forming a plurality of conductive lines in the first contact holes and on the first insulation layer, and spaced apart from each other;
• etching the first insulation layer to form a plurality of trenches in the first insulation layer to expose bottom surfaces of the conductive lines;
• forming a plurality of spacers to cover exposed bottom surfaces and sidewalls of the conductive lines;
• forming a second insulation layer on the substrate;
• etching the first and second insulation layers to form a second contact hole;
• and
• forming a contact pad in the second contact hole.