Interconnect and a method of manufacture therefor

A method for manufacturing an integrated circuit, comprising:

• forming transistor devices over a semiconductor substrate;
• forming one or more metallization layers over the transistor devices, the one or more metallization layers interconnecting one or more of the transistor devices;
• forming a protective overcoat over the one or more metallization layers, wherein the protective overcoat has an opening located therein;
• forming a surface conductive lead in the opening and over a barrier layer, a portion of the barrier layer extending beyond the surface conductive lead;
• and
• subjecting the portion of the barrier layer to a dry etch to remove the portion, the dry etch selective to the barrier layer.