Method for growth of group III-V semiconductor material on a dielectric
AssigneeNorthrop Grumman Corporation
InventorsVincent Gambin, Donald Sawdai
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Abstract
Formation of a regrowth layer of a Group III-V semiconductor material is facilitated by prior formation of an intermediate layer, selected primarily for its smooth morphology properties. The intermediate layer is formed over an underlying substrate and over a dielectric layer formed over portions of the substrate. The intermediate layer maintains the monocrystalline properties of the underlying substrate in regions other than those covered by the dielectric layer, and improves the electrical and morphology properties of the regrowth layer formed over the intermediate layer.
Claims6
A method for fabricating a Group III-V semiconductor structure, comprising the steps of:
- forming a substrate;
- forming a dielectric layer over at least one selected portion of the substrate;
- forming an intermediate layer over the dielectric layer and still exposed portions of the substrate, wherein the intermediate layer is selected for its smooth morphology properties;
- and
- forming a Group III-V regrowth layer over the intermediate layer.
Dependencies are inferred from the claim text.