Back to results
US 2005/0239271 A1Published application
Heteroepitaxial growth method for gallium nitride
AssigneeYamaha Corporation
InventorsShingo Sakakibara, Yoku Inoue, Hidenori Mimura
Life of this patent
Estimating the term…
Abstract
A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate and a step B of depositing or vapor depositing at least one atom layer of gallium.
Claims13
A heteroepitixial growth method for gallium nitride on the surface of a quartz substrate or a silicon substrate,
- wherein the method comprises a step A of nitriding the surface of the substrate, and a step B of depositing or vapor depositing at least one atom layer of gallium.
A hetroepitaxial growth method for gallium nitride on the surface of a quartz substrate,
- wherein the method comprises a step B of depositing or vapor depositing at least one atom layer of gallium.
Dependencies are inferred from the claim text.