Method for producing a semiconductor element
AssigneeOSRAM Opto Semiconductor GmbH
InventorsMichael Fehrer, Berthold Hahn, Volker Harle, Stephan Kaiser, Frank Otte, Andreas Plössl
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Abstract
A method for producing a semiconductor component, in particular a thin-film component, a semiconductor layer being separated from a substrate by irradiation with a laser beam having a plateaulike spatial beam profile. Furthermore, the semiconductor layer, prior to separation, is applied to a carrier with an adapted thermal expansion coefficient. The method is suitable in particular for semiconductor layers containing a nitride compound semiconductor.
Claims39
A method for producing a semiconductor component, in which a semiconductor layer (2) is separated from a substrate (1) by irradiation with a laser beam (6),
- wherein
- the laser beam (6) has a plateaulike spatial beam profile (7).
A method for producing a semiconductor component, in which a semiconductor layer (2) is separated from a substrate (1) by irradiation with a laser beam (6),
- wherein
- the laser beam (6) is generated by an excimer laser.
A method for producing a semiconductor component, in which a semiconductor layer (2) is separated from a substrate (1) by irradiation with a laser beam (6),
- wherein
- prior to separation from the substrate (1), the semiconductor layer (2) is applied, preferably soldered, onto a carrier (4) by the side remote from the substrate (1).
Dependencies are inferred from the claim text.