Diffusion-enhanced crystallization of amorphous materials to improve surface roughness
AssigneeMicron Technology, Inc.
InventorsEr-Xuan Ping, Randhir Thakur
Life of this patent
Estimating the term…
Abstract
Methods of forming a roughened surface through diffusion-enhanced crystallization of an amorphous material are disclosed. In one aspect, conductive hemispherical grain silicon can be formed through dopant diffusion-enhanced crystallization of one or more layers of amorphous silicon. To further enhance uniformity in the formation of the hemispherical grain silicon, the exposed surface of the amorphous silicon can be seeded before crystallization to further enhance uniformity of the surface structures formed in the hemispherical grain silicon.
Claims21
1-68. (canceled)
A method of forming hemispherical grain silicon comprising:
- forming a discrete layer comprising amorphous silicon on a substrate, the discrete layer having a thickness, wherein at least a portion of the amorphous silicon includes a dopant, and wherein a concentration of the dopant is at a maximum near a middle of the thickness of the discrete layer;
- and
- annealing the discrete layer.
A method of forming hemispherical grain silicon comprising:
- providing a discrete layer comprising amorphous silicon on a substrate, at least a portion of the amorphous silicon including a dopant, wherein a concentration of the dopant varies through a depth of the discrete layer;
- forming a seed layer on an exposed surface of the discrete layer;
- and
- annealing the discrete layer and the seed layer to form the hemispherical grain silicon.
A method for manufacturing a semiconductor device comprising:
- providing a discrete layer comprising amorphous material on a semiconductor substrate, at least a portion of the amorphous material including a dopant, wherein a concentration of the dopant is substantially lower at an exposed surface of the discrete layer than in at least an underlying portion of the discrete layer;
- annealing the discrete layer to form a roughened surface, wherein the roughened surface forms at least a portion of a first electrode of a capacitor;
- providing a layer of dielectric material on the first electrode;
- and
- providing a second electrode of the capacitor on the layer of dielectric material.
A method of forming hemispherical grain silicon comprising:
- forming a base layer comprising amorphous silicon on a substrate;
- forming a first layer comprising doped amorphous silicon on the base layer;
- forming a second layer comprising amorphous silicon directly on the first layer, the second layer having an exposed surface, wherein the second layer is undoped or doped to a concentration less than a concentration of dopant in the first layer;
- and
- annealing the base, first, and second layers.
Dependencies are inferred from the claim text.