PCMO thin film with memory resistance properties
AssigneeSharp Laboratories of America, Inc.
InventorsWei-Wei Zhuang, Tingkai Li, Sheng Hsu, Fengyan Zhang
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Abstract
A method is provided for forming a Pr0.3Ca0.7MnO3 (PCMO) thin film with crystalline structure-related memory resistance properties. The method comprises: forming a PCMO thin film with a first crystalline structure; and, changing the resistance state of the PCMO film using pulse polarities responsive to the first crystalline structure. In one aspect the first crystalline structure is either amorphous or a weak-crystalline. Then, the resistance state of the PCMO film is changed in response to unipolar pulses. In another aspect, the PCMO thin film has either a polycrystalline structure. Then, the resistance state of the PCMO film changes in response to bipolar pulses.
Claims23
A method for forming a Pr0.3Ca0.7MnO3 (PCMO) thin film with crystalline structure-related memory resistance properties, the method comprising:
- forming a PCMO thin film with a first crystalline structure;
- and,
- changing the resistance state of the PCMO film using pulse polarities responsive to the first crystalline structure.
The method of claim 23 wherein forming a PCMO thin film includes forming a PCMO film with an amorphous first crystalline structure;
- wherein writing a high resistance state includes writing a resistance of greater than about 60 k-ohms, using a 5 V pulse of 100 ns;
- and,
- wherein resetting to a low resistance state includes resetting to a resistance of less than about 50 k-ohms, using a 3 V pulse of 10 μs.
A Pr0.3Ca0.7MnO3 (PCMO) device with crystalline structure-related memory resistance properties, the device comprising:
- a bottom electrode;
- a PCMO thin film with a first crystalline structure overlying the bottom electrode, having a resistance state that is selected using pulse polarities responsive to the first crystalline structure;
- and,
- a top electrode overlying the PCMO film.
Dependencies are inferred from the claim text.