Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device, comprising the steps of:

• forming a plurality of cell-selecting transistors in a semiconductor substrate;
• forming bit lines, which are electrically connected with the cell-selecting transistors, over the semiconductor substrate;
• forming an insulative lower hydrogen-barrier film over the bit lines;
• forming a plurality of first contact plugs, which pass through the insulative lower hydrogen-barrier film to reach the cell-selecting transistors;
• selectively forming a plurality of conductive lower hydrogen-barrier films on the insulative lower hydrogen-barrier film so that the conductive lower hydrogen-barrier films cover the upper faces of the first contact plugs;
• forming capacitor rows over the conductive lower hydrogen-barrier films, the capacitor rows including a plurality of capacitors each having a capacitive insulating film made of a ferroelectric material or a high dielectric material;
• and
• forming an upper hydrogen-barrier film over the capacitor rows,
• wherein the upper-hydrogen-barrier-film formation step includes the step of forming the upper hydrogen-barrier film in such a manner that the upper hydrogen-barrier film is in contact with the insulative lower hydrogen-barrier film where the insulative lower hydrogen-barrier film is located outside the capacitor rows.

A method for fabricating a semiconductor device, comprising the steps of:

• forming a plurality of cell-selecting transistors in a semiconductor substrate;
• forming bit lines, which are electrically connected with the cell-selecting transistors, over the semiconductor substrate;
• forming a plurality of first contact plugs, which reach the respective cell-selecting transistors;
• selectively forming a plurality of conductive lower hydrogen-barrier films on the first contact plugs so that the conductive lower hydrogen-barrier films cover the upper faces of the first contact plugs;
• forming an insulative lower hydrogen-barrier film so that the insulative lower hydrogen-barrier film covers regions located alongside the conductive lower hydrogen-barrier films, and also covers the end faces of the conductive lower hydrogen-barrier films;
• forming capacitor rows over the conductive lower hydrogen-barrier films, the capacitor rows including a plurality of capacitors each having a capacitive insulating film made of a ferroelectric material or a high dielectric material;
• and
• forming an upper hydrogen-barrier film over the capacitor rows,
• wherein the upper-hydrogen-barrier-film formation step includes the step of forming the upper hydrogen-barrier film in such a manner that the upper hydrogen-barrier film is in contact with the insulative lower hydrogen-barrier film where the insulative lower hydrogen-barrier film is located outside the capacitor rows.

A method for fabricating a semiconductor device, comprising the steps of:

• forming a plurality of cell-selecting transistors in a semiconductor substrate;
• forming bit lines, which are electrically connected with the cell-selecting transistors, over the semiconductor substrate;
• forming an insulative lower hydrogen-barrier film over the bit lines;
• forming a plurality of contact holes, which pass through the insulative lower hydrogen-barrier film to reach the cell-selecting transistors;
• forming conductive lower hydrogen-barrier films on the wall and bottom faces of the contact holes so that the upper end portions of the conductive lower hydrogen-barrier films are in contact with the insulative lower hydrogen-barrier film, and then forming first contact plugs that include at least the conductive lower hydrogen-barrier films;
• forming capacitor rows over the conductive lower hydrogen-barrier films, the capacitor rows including a plurality of capacitors each having a capacitive insulating film made of a ferroelectric material or a high dielectric material;
• and
• forming an upper hydrogen-barrier film over the capacitor rows,
• wherein the upper-hydrogen-barrier-film formation step includes the step of forming the upper hydrogen-barrier film in such a manner that the upper hydrogen-barrier film is in contact with the insulative lower hydrogen-barrier film where the insulative lower hydrogen-barrier film is located outside the capacitor rows.

A method for fabricating a semiconductor device, comprising the steps of:

• forming a lower hydrogen-barrier film over a semiconductor substrate;
• forming capacitor rows over the lower hydrogen-barrier film, the capacitor rows including a plurality of capacitors each having a capacitive insulating film made of a ferroelectric material or a high dielectric material;
• forming an interlayer dielectric film covering the capacitor rows;
• forming, in the interlayer dielectric film, an open trench exposing the lower hydrogen-barrier film where the lower hydrogen-barrier film is located outside the capacitor rows;
• and
• forming an upper hydrogen-barrier film on the interlayer dielectric film so that the upper hydrogen-barrier film is in contact with the lower hydrogen-barrier film where the upper hydrogen-barrier film is on the bottom face of the open trench.

A method for fabricating a semiconductor device, comprising the steps of:

• forming a lower hydrogen-barrier film over a semiconductor substrate;
• forming capacitor rows over the lower hydrogen-barrier film, the capacitor rows including a plurality of capacitors each having a capacitive insulating film made of a ferroelectric material or a high dielectric material;
• forming a side-wall hydrogen-barrier film so that the side-wall hydrogen-barrier film covers the lateral portions of the capacitor rows, and is in contact with the lower hydrogen-barrier film where the lower hydrogen-barrier film is located outside the capacitor rows;
• and
• forming an upper hydrogen-barrier film so that the upper hydrogen-barrier film covers the top side of the capacitor rows, and is in contact with the side-wall hydrogen-barrier film.