Back to results
US 2005/0239240 A1Published application
Process for fabricating semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHisashi Ohtani, Takeshi Fukunaga, Akiharu Miyanaga
Life of this patent
Estimating the term…
Abstract
A process for fabricating a semiconductor device comprising the steps of: introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.
Claims1
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor film comprising amorphous silicon on an insulating surface;
- crystallizing said semiconductor film;
- annealing said semiconductor film in an oxidizing gas containing atmosphere;
- irradiating the crystallized semiconductor film by laser beam;
- heating the semiconductor film at 400° C. or higher to reduce a spin density of said semiconductor film.
2 more elements
Dependencies are inferred from the claim text.