Thin-film transistor and method of fabricating the same

Abstract

There is provided a thin-film transistor being capable of reducing dispersion in threshold voltage and a method of fabricating the same. The thin-film transistor includes an insulating undercoating layer formed for a substrate, a semiconductor active layer of polycrystalline silicon formed on the insulating undercoating layer, and a gate electrode formed insulated on the semiconductor active layer, the insulating undercoating layer being of a silicon oxide film layer formed using TEOS as a material and by a plasma CVD method. Preferably, the concentration of carbon atoms of the silicon oxide film layer is within a range of 6×1019 atoms/cm3 to 1×1020 atoms/cm3 and the concentration of nitride atoms is not more than 3×1019 atoms/cm3.

Dependencies are inferred from the claim text.