Ferroelectric capacitor having a substantially planar dielectric layer and a method of manufacture therefor

A ferroelectric capacitor, comprising:

• a first electrode layer;
• a substantially planar ferroelectric dielectric layer located over the first electrode layer, wherein the substantially planar ferroelectric dielectric layer has an average surface roughness of less than about 4 nm;
• and
• a second electrode layer located over the substantially planar ferroelectric dielectric layer.

A method for manufacturing a ferroelectric random access memory (FeRAM) device, comprising:

• forming a transistor having source/drain regions over a semiconductor substrate;
• forming an interlevel dielectric layer over the transistor, the interlevel dielectric layer having a conductive plug therein contacting at least one of the source/drain regions;
• and
• forming a ferroelectric capacitor over the interlevel dielectric layer and contacting the conductive plug, including;
• forming a first electrode layer over the conductive plug;
• forming a ferroelectric dielectric layer over the first electrode layer;
• planarizing the ferroelectric dielectric layer to form a planarized ferroelectric dielectric layer;
• and
• forming a second electrode layer over the planarized ferroelectric dielectric layer.

A method for manufacturing a ferroelectric capacitor, comprising:

• forming a first electrode layer;
• forming a ferroelectric dielectric layer over the first electrode layer;
• and
• forming a second electrode layer over the planarized ferroelectric dielectric layer, wherein at least one of the first electrode layer, ferroelectric dielectric layer or second electrode layer is planarizing to form a planarized first electrode layer, planarized ferroelectric dielectric layer or planarized second electrode layer, respectively.