Nonvolatile ferroelectric perpendicular electrode cell, FeRAM having the cell and method for manufacturing the cell

A nonvolatile ferroelectric memory device having a perpendicular electrode cell, comprising:

• a perpendicular electrode cell array including a plurality of perpendicular electrode cells for reading and writing cell data, each perpendicular electrode cell including a plurality of word lines and a plurality of bit lines that cross each other orthogonally and including a ferroelectric capacitor having both electrodes and ferroelectric layers that are formed perpendicular to the bit lines and including a switching device for selectively switching a current direction depending on voltage change between the ferroelectric capacitor and the bit line;
• a word line driving unit for selectively activating the word line perpendicular electrodes;
• a sense amplifier unit for sensing cell data applied to the bit line;
• a data bus for transmitting read data sensed in the sense amplifier unit and write data to be transmitted to the sense amplifier unit;
• and
• a main amplifier unit for amplifying the read data applied from the data bus and outputting the read data to the data buffer.

A method for manufacturing a nonvolatile ferroelectric perpendicular electrode cell, comprising:

• a first step of forming a serial PN diode switch to connect a PN diode to a PNPN diode in serial;
• a second step of forming a bit line contact node and a capacitor contact node on the serial PN diode switch to connect the bit line contact node to a bit line;
• a third step of depositing an electrode material perpendicular on the capacitor contact node;
• a forth step of etching the electrode material to be separated at a predetermined interval into a storage perpendicular electrode and a word line perpendicular electrode;
• a fifth step of coating a ferroelectric material on the perpendicular electrodes and the etched region between the storage perpendicular electrode and the word line perpendicular electrode to form a ferroelectric layer of a ferroelectric capacitor;
• and
• a sixth step of performing an anneal process on the ferroelectric material.