Flip chip package, semiconductor package with bumps and method for manufacturing semiconductor package with bumps

A semiconductor package with bumps formed therein, comprising:

• a chip, having an active surface and a-passivation layer formed on the active surface, wherein a plurality of first bonding pads and second bonding pads are formed on the active surface and the passivation layer leaves the first and the second bonding pads exposed;
• a plurality of first under bump metallurgy layers formed on the first bonding pads respectively;
• a second under bump metallurgy layer formed on the second bonding pads and a portion of the passivation layer between the second bonding pads;
• and
• a plurality of bumps formed on the first under bump metallurgy layers and the second under bump metallurgy layer, and located over the portion of the passivation layer.

A method for manufacturing a semiconductor package, comprising:

• providing a chip, the chip having an active surface and a passivation layer formed on the active surface, wherein first bonding pads and two second bonding pads are formed on the active surface and the passivation layer leaves the first and the second bonding pads exposed;
• froming a metal layer over the first bonding pads, the second bonding pads and the passivation layer;
• disposing a photo-resist layer on the passivation layer so as to form a plurality of first openings exposing a first portion of the metal layer located on the first bonding pads respectively and a second opening exposing a second portion of the metal layer located on two of the second bonding pads and a portion of the passivation layer therebetween;
• forming a plurality of first bumps in the first openings and a second bump in the second opening;
• removing the photo-resist layer;
• and
• removing the portion of the metal layer not covered by the first bumps and the second bump to form a first under bump metallurgy layers and a second under bump metallurgy layer, wherein the first bumps are disposed on the first under bump metallurgy layers respectively and the second bump is disposed on the second under bump metallurgy layer.