Electronic circuit device having silicon substrate
OwnerMakoto Ishida, Kazuaki Sawada +2inventors
InventorsMakoto Ishida, Kazuaki Sawada, Hidekuni Takao, Minoru Sudo
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Abstract
An electronic circuit device having a silicon substrate is provided comprising: a silicon substrate having a semiconductor element and a recess; and at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed. In the electronic circuit device, the passive element is entrenched in the recess of the silicon substrate, and the semiconductor element formed on the silicon substrate is electrically connected to the passive element.
Claims22
An electronic circuit device, comprising:
- a silicon substrate having a semiconductor element and a recess;
- and
- at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed, wherein:
- the passive element is entrenched in the recess of the silicon substrate;
- and
- the semiconductor element formed on the silicon substrate is electrically connected to the passive element.
An electronic circuit device, comprising:
- a silicon substrate having a semiconductor element and a recess;
- and
- at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed, wherein:
- the passive element has a protruded terminal;
- and
- the protruded terminal of the passive element is inserted into the recess of the silicon substrate to electrically connect the semiconductor element to the passive element.
An electronic circuit device, comprising:
- a silicon substrate having a semiconductor element on a front surface thereof and at least one through hole, which penetrates through the front surface and the back surface;
- at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed;
- and
- a connecting element disposed in the through hole for electrically connecting the semiconductor element to the passive element, wherein the surface of the connecting element is comprised of an insulating resin.
An electronic circuit device, comprising:
- a silicon substrate having a semiconductor element on a front surface thereof, a recess on a back surface thereof and at least one through hole, which penetrates through the front surface and the back surface, in the recess;
- and
- at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed and which is disposed in the recess;
- and a connecting element disposed in the through hole for electrically connecting the semiconductor element to the passive element, wherein the surface of the connecting element is comprised of an insulating resin.
An electronic circuit device, comprising:
- a silicon substrate having a semiconductor element on a front surface thereof;
- and at least one through hole, which penetrates through the front surface and the back surface;
- and
- at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed, wherein:
- the passive element has a protruded terminal;
- the protruded terminal of the passive element is entrenched in the through hole on the side of the back surface of the silicon substrate on which the semiconductor element is formed;
- and
- the semiconductor element formed on the silicon substrate is electrically connected to the passive element.
An electronic circuit device, comprising:
- a silicon substrate having a semiconductor element on a front surface thereof;
- a recess on a back surface thereof;
- and at least one through hole, which penetrates through the front surface and the back surface, in the recess;
- and
- at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed, wherein:
- the passive element has a protruded terminal that fits into the through hole;
- the protruded terminal of the passive element is entrenched in the through hole on the side of the back surface of the silicon substrate on which the semiconductor element is formed;
- and
- the semiconductor element formed on the silicon substrate is electrically connected to the passive element.
Dependencies are inferred from the claim text.