Method of making a tantalum layer and apparatus using a tantalum layer
AssigneeHewlett-Packard Development Company, L.P.
InventorArjang Fartash
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Abstract
A method of making tantalum structures, including, creating a tantalum layer disposed on a first layer region of a first layer and on a second layer region of a second layer. The tantalum layer has a substantially bcc-phase tantalum region on the first layer region, and a non-bcc-phase tantalum region on the second layer region.
Claims56
A method of making a tantalum structure, comprising creating a tantalum layer disposed on a first layer region of a first layer and on a second layer region of a second layer, wherein said tantalum layer is a substantially bcc-phase tantalum region on said first layer region and said tantalum layer is a non-bcc-phase tantalum region on said second layer region.
The method in accordance with claim 22, wherein etching said tantalum layer further comprises selectively etching said non-bcc-phase tantalum region.
An apparatus, comprising a tantalum layer having a substantially bcc-phase tantalum region contiguous to a non-bcc-phase tantalum region, wherein said substantially bcc-phase tantalum region and said non-bcc-phase tantalum region each have a compressive residual stress.
An apparatus, comprising:
- a substrate;
- a tantalum layer disposed over said substrate;
- and
- a bcc-phase-tantalum forming region disposed between said substrate and said tantalum layer, said bcc-phase-tantalum forming region in contact with said tantalum layer, wherein said tantalum layer forms a substantially bcc-phase tantalum region where said tantalum layer is in contact with said bcc-phase-tantalum forming region.
An apparatus, comprising:
- a substrate;
- and
- means for creating a tantalum layer disposed over or on said substrate, said tantalum layer having at least one substantially bcc-phase tantalum region contiguous with at least one non-bcc-phase tantalum region.
Dependencies are inferred from the claim text.