Non-orthogonal write line structure in MRAM

A method of manufacturing a magnetic random access memory (MRAM) cell, comprising:

• forming an MRAM cell stack located a substrate, including forming a pinned layer, a tunneling barrier layer, and a free layer, the tunneling barrier layer interposing the pinned layer and the free layer;
• and
• forming first and second write lines spanning at least one side of the MRAM cell stack and defining a projected region of intersection of the MRAM cell stack and the first and second write lines;
• wherein the first write line extends in a first direction within the projected region of intersection;
• and
• wherein the second write line extends in a second direction within the projected region of intersection, wherein the first and second directions are angularly offset by an offset angle ranging between 45 and 90 degrees, exclusively.

An integrated circuit device, comprising:

• a plurality of magnetic random access memory (MRAM) cells located over a substrate and each including a pinned layer, a tunneling barrier layer, and a free layer, the tunneling barrier layer interposing the pinned layer and the free layer;
• and
• a plurality of first and second write lines each spanning at least one side of ones of the plurality of MRAM cells, thereby defining a plurality of projected regions of intersection of ones of the plurality of MRAM cells and corresponding ones of the first and second write lines;
• wherein one of the plurality of first write lines extends in a first direction within a corresponding one of the plurality of projected regions of intersection;
• wherein one of the plurality of second write lines extends in a second direction within the corresponding one of the plurality of projected regions of intersection;
• and
• wherein the first and second directions are angularly offset by an offset angle ranging between about 45 and about 90 degrees, exclusively.