Methods for erasing bit cells in a high density data storage device

A method of erasing a target bit cell within a media including a phase change layer using a tip adapted to be placed in electrical communication with the media such that a current flows between the tip and the media, the method comprising:

• positioning the tip over a leading edge of the target bit cell, the phase change layer of the target bit cell having an amorphous structure;
• passing the current through the media so that a portion of the leading edge is heated to at least the crystallization temperature;
• moving the tip across the target bit cell from the leading edge to a trailing edge of the target bit cell so that a heat wave front moves from the leading edge to the trailing edge;
• and
• allowing the target bit cell to cool so that the phase change layer within the target bit cell is substantially crystalline in structure.

A method of erasing a target bit cell within a media including a phase change layer using a tip adapted to be placed in electrical communication with the media such that a current flows between the tip and the media, the method comprising:

• positioning the tip over a leading edge of the target bit cell, the phase change layer of the target bit cell having an amorphous structure;
• passing the current through the media so that a portion of the leading edge is heated to at least the crystallization temperature;
• forming a nucleation site at the portion;
• moving the tip across the target bit cell from the leading edge to a trailing edge of the target bit cell so that the nucleation site propagates from the leading edge to the trailing edge;
• and
• allowing the target bit cell to cool so that the phase change layer within the target bit cell is substantially crystalline in structure.

19 A method of erasing a target bit cell within a media including a phase change layer using a tip adapted to be placed in electrical communication with the media such that a current flows between the tip and the media, the method comprising:

• positioning the tip over a first edge of the target bit cell;
• passing the current through the media so that the media is heated to at least a crystallization temperature;
• moving the tip across the target bit cell from the first edge to a second edge of the target bit cell;
• and
• allowing the target bit cell to cool so that the phase change layer within the target bit cell is substantially crystalline in structure.

A method of erasing a target bit cell within a media including a phase change layer using a tip adapted to be placed in electrical communication with the media such that a current flows between the tip and the media, the method comprising:

• positioning the tip over a first edge of the target bit cell, the phase change layer of the target bit cell having an amorphous structure;
• passing the current through the media so that a portion of the first edge is heated to at least the crystallization temperature;
• moving the tip across the target bit cell from the first edge to a second edge of the target bit cell so that a heat wave front moves from the first edge to the second edge;
• and
• allowing the target bit cell to cool so that the phase change layer within the target bit cell is substantially crystalline in structure.

A method of erasing a target bit cell within a media including a phase change layer using a tip adapted to be placed in electrical communication with the media such that a current flows between the tip and the media, the method comprising:

• positioning the tip over a first edge of the target bit cell, the phase change layer of the target bit cell having an amorphous structure;
• passing the current through the media so that a portion of the first edge is heated to at least the crystallization temperature;
• forming a nucleation site at the portion;
• moving the tip across the target bit cell from the first edge to a second edge of the target bit cell so that the nucleation site propagates from the first edge to the second edge;
• and
• allowing the target bit cell to cool so that the phase change layer within the target bit cell is substantially crystalline in structure.

A method of erasing a target bit cell within a media including a phase change layer using a tip adapted to be placed in electrical communication with the media such that a current flows between the tip and the media, the method comprising:

• positioning the tip over a first edge of the target bit cell, the phase change layer of the target bit cell having an amorphous structure;
• passing the current through the media so that a portion of the first edge is heated to at least the crystallization temperature;
• cooling the portion of the first edge so that a crystal forms;
• moving the tip across the target bit cell from the first edge to a second edge of the target bit cell so that the crystal is pulled from the first edge to the second edge;
• and
• allowing the target bit cell to cool so that the phase change layer within the target bit cell is substantially crystalline in structure.

A method of erasing a target bit cell within a media including a phase change layer using a tip adapted to be placed in electrical communication with the media such that a current flows between the tip and the media, the method comprising:

• positioning the tip over a first edge of the target bit cell, the phase change layer of the target bit cell having an amorphous structure;
• passing the current through the media so that a portion of the first edge is heated to at least the crystallization temperature;
• forming a nucleation site at the portion of the first edge;
• moving the tip across the target bit cell from the first edge to a second edge of the target bit cell so that the nucleation site is pulled from the first edge to the second edge;
• and
• allowing the target bit cell to cool so that the phase change layer within the target bit cell is substantially crystalline in structure.