MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJs) and method for fabricating the same

A method for fabricating an MRAM, comprising:

• (1) forming a transistor on a semiconductor substrate;
• (2) forming a first interlayer dielectric on the semiconductor substrate to cover the transistor;
• (3) forming a first data line on the first interlayer dielectric;
• (4) forming a second interlayer dielectric on the first interlayer dielectric to cover the first data line;
• (5) forming a pad conductive layer on a portion of the second interlayer dielectric to be coupled to a drain region of the transistor, wherein the pad conductive layer is formed to be symmetric about the drain region;
• (6) forming a first MTJ cell and a second MTJ cell spaced apart from the first MTJ cell on the pad conductive layer;
• (7) forming a third interlayer dielectric on the second interlayer dielectric to cover the pad conductive layer, the first MTJ cell, and the second MTJ cell;
• and
• (8) forming a first bit line coupled to the first MTJ cell and a second bit line coupled to the second MTJ cell on the third interlayer dielectric.

A method for fabricating an MRAM, comprising:

• forming a transistor on a semiconductor substrate;
• forming a first interlayer dielectric on the semiconductor substrate to cover the transistor;
• forming a first data line on the first interlayer dielectric above a gate electrode of the transistor;
• forming a second interlayer dielectric on the first interlayer dielectric to cover the first data line;
• forming a first MTJ cell and a second MTJ cell spaced apart from the first MTJ cell on the second interlayer dielectric layer;
• forming a third interlayer dielectric on the second interlayer dielectric to cover the first MTJ cell, and the second MTJ cell;
• and
• forming a first bit line coupled to the first MTJ cell and a second bit line coupled to the second MTJ cell on the third interlayer dielectric, the first and second bit lines being perpendicular to the first data line.