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US 2005/0232002 A1Published application
Magnetic random access memory
AssigneeKabushiki Kaisha Toshiba
InventorYoshihisa Iwata
Life of this patent
Estimating the term…
Abstract
Blocks are connected to a read bit line. One block has MTJ elements which are connected to each other in series between the read bit line and a ground terminal. A MTJ elements are superposed on, e.g., a semiconductor substrate. A read bit line is arranged on the superposed MTJ elements. A write word line extending in a X-direction and a write bit line extending in a Y-direction are arranged in the vicinity of the MTJ elements in the block.
Claims21
1-155. (canceled)
A magnetic random access memory, comprising:
- memory cells which are connected in series and use a magneto resistive effect, wherein resistance values of the memory cells are different from each other when magnetizing states of the memory cells are the same;
- a bit line which is connected to one end of the memory cells and extends in a first direction;
- and
- a read circuit connected to the bit line.
1 more element
A magnetic random access memory, comprising:
- memory cells which are connected in parallel and use a magneto resistive effect, wherein resistance values of the memory cells are different from each other when magnetizing states of the memory cells are the same;
- a bit line which is connected to one end of the memory cells and extends in a first direction;
- and
- a read circuit connected to the bit line.
1 more element
Dependencies are inferred from the claim text.