US 2005/0230352 A1 · Method and compositions for hardening photoresist in etching processes

Abstract

A method for etching a wafer having a pattern of photoresist material thereon is disclosed. The method includes curing the photoresist material with a bromine containing plasma. Then a main etch of the wafer is carried out. A method for curing a pattern of photoresist material on a wafer is also disclosed. The curing method includes providing a bromine containing plasma and exposing the photoresist material to the plasma, such that a layer of the wafer below the photoresist material is not etched through. A composition of a plasma for curing a photoresist material on a wafer in a high density plasma processing device includes bromine.

Claims6

Dependent claims

1-13. (canceled)

Dependencies are inferred from the claim text.

Facts

Application

11/157,782Filed 20 Jun 2005

Priority

14 Aug 2002

Published

20 Oct 2005

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10P 50/73
Etching of wafers, substrates or parts of devices: using masks for insulating materials
H10P 50/695
Characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane: characterised by the process involved…
H10P 50/71
Etching of wafers, substrates or parts of devices: using masks for conductive or resistive materials
H10P 76/204
Of masks comprising organic materials: of organic photoresist masks

Abstract

Claims6

Dependent claims

1-13. (canceled)

Dependencies are inferred from the claim text.

Method and compositions for hardening photoresist in etching processes

Life of this patent

Abstract

Claims6

Method and compositions for hardening photoresist in etching processes

Life of this patent

Abstract

Claims6