Multideposition SACVD reactor

A method of in-situ conditioning a carbon susceptor in a AME Centura reactor to render it NF3 resistant comprising the steps of:

• a) placing a standard carbon susceptor in a processing chamber of said reactor;
• b) cleaning said chamber interior volume with HCl;
• c) purging said interior volume with H2;
• d) coating said susceptor bottom with a film of polysilicon using a DCS precursor;
• e) purging said interior volume with H2;
• f) coating said susceptor top with a film of polysilicon using a SiH4 precursor;
• and
• g) purging said interior volume with H2.

A method of in-situ conditioning a carbon susceptor in a sub-atmospheric chemical vapor deposition reactor to render it NF3 resistant, the method comprising the steps of:

• a) placing said carbon susceptor in a processing chamber of said reactor, said susceptor having a bottom surface and a top surface;
• b) cleaning said chamber interior volume with HCl;
• c) purging said interior volume with H2;
• d) coating said susceptor bottom surface with a film of polysilicon using a DCS precursor, said susceptor bottom film having a first thickness;
• e) purging said interior volume with H2;
• f) coating said susceptor top surface with a film of polysilicon using a SiH4 precursor, said susceptor top film having a second thickness which is less than said first thickness;
• and
• g) purging said interior volume with H2.